IXYS MIEB101H1200EH IGBT Modules IGBT Module H Bridge
ManufacturerIXYS(View more products from this manufacturer)
ModelMIEB101H1200EH
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Technology: Si
Unit Weight: 300 g
REACH - SVHC: Details
Configuration: Half Bridge
Mounting Style: Screw Mount
Pd - Power Dissipation: 630 W
Gate-Emitter Leakage Current: 200 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 183 A
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