IXYS IXYN80N90C3H1 IGBT Modules 900V 70A 2.7V XPT IGBTs GenX3 w/ Diode
ManufacturerIXYS(View more products from this manufacturer)
ModelIXYN80N90C3H1
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Technology: Si
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Pd - Power Dissipation: 500 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 900 V
Collector-Emitter Saturation Voltage: 2.3 V
Continuous Collector Current at 25 C: 115 A
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