IXYS IXTN30N100L Linear Power MOSFET 30 Amps 1000V

Width: 25.07 mm

Height: 9.6 mm

Length: 38.2 mm

Fall Time: 78 ns

Rise Time: 70 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 100 V

Pd - Power Dissipation: 800 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 36 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 450 mOhms

Vds - Drain-Source Breakdown Voltage: 1 kV