For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

IXYS IXTH32P20T MOSFETs TrenchP Power MOSFET

Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Technology: Si

Unit Weight: 6 g

Mounting Style: Through Hole

Transistor Polarity: P-Channel

Id - Continuous Drain Current: 32 A

Rds On - Drain-Source Resistance: 130 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts