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IXYS IXST30N60BD1 IGBT Transistors 55 Amps 600V 2 Rds

ModelIXST30N60BD1
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Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Technology: Si

Unit Weight: 4.500 g

Configuration: Single

Mounting Style: SMD/SMT

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 55 A

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