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IXYS IXSN50N60BD3 IGBT Transistors 75 Amps 600V 2.5 Rds

ModelIXSN50N60BD3
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Width: 25.42 mm

Height: 9.6 mm

Length: 38.23 mm

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 75 A

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