IXYS IXGT6N170 IGBT Transistors 12 Amps 1700 V 4 V Rds
ManufacturerIXYS(View more products from this manufacturer)
ModelIXGT6N170
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Width: 14 mm
Height: 5.1 mm
Length: 16.05 mm
Technology: Si
Unit Weight: 4.500 g
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 75 W
Continuous Collector Current: 12 A
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Continuous Collector Current Ic Max: 6 A
Collector-Emitter Saturation Voltage: 4 V
Continuous Collector Current at 25 C: 12 A
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