IXYS IXGP2N100 IGBT Transistors 4 Amps 1000V 2.7 Rds
ManufacturerIXYS(View more products from this manufacturer)
ModelIXGP2N100
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Width: 4.83 mm
Height: 9.15 mm
Length: 10.66 mm
Technology: Si
Unit Weight: 2.300 g
Configuration: Single
Mounting Style: Through Hole
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 1 kV
Continuous Collector Current Ic Max: 4 A
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