IXYS IXFT80N085 MOSFETs MOSFET, INTR DIODE 85V, 80A

Width: 14 mm

Height: 5.1 mm

Length: 16.05 mm

Fall Time: 31 ns

Rise Time: 75 ns

Technology: Si

Unit Weight: 4.500 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 50 ns

Typical Turn-Off Delay Time: 95 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 9 mOhms

Vds - Drain-Source Breakdown Voltage: 85 V