IXYS IXFR80N60P3 Polar3 HiperFET Power MOSFET Polar3 HiPerFET Power MOSFET

Width: 5.21 mm

Height: 21.34 mm

Length: 16.13 mm

Fall Time: 8 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 190 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 540 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 48 ns

Typical Turn-Off Delay Time: 87 ns

Id - Continuous Drain Current: 48 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 55 S

Rds On - Drain-Source Resistance: 76 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 5 V