For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

IXYS IXFR64N60Q3 MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/42A

ModelIXFR64N60Q3
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Rise Time: 300 ns

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 190 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 568 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 42 A

Rds On - Drain-Source Resistance: 104 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts