IXYS IXFN70N120SK HiperFET SiC Power MOSFET
ManufacturerIXYS(View more products from this manufacturer)
ModelIXFN70N120SK
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Technology: SiC
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 68 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 25 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 2 V
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