IXYS IXFN32N100Q3 HiperFET Q3Class HiPerFET Pwr MOSFET 1000V/28A
ManufacturerIXYS(View more products from this manufacturer)
ModelIXFN32N100Q3
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Rise Time: 300 ns
Technology: Si
Unit Weight: 30 g
Configuration: Single
Mounting Style: Screw Mount
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 780 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 28 A
Maximum Operating Temperature: + 150 C
Rds On - Drain-Source Resistance: 320 mOhms
Vds - Drain-Source Breakdown Voltage: 1 kV
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts