IXYS IXFN320N17T2 GigaMOS Trench T2 HiperFet GigaMOS Trench T2 HiperFET PWR MOSFET

Fall Time: 230 ns

Rise Time: 170 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.07 kW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 46 ns

Typical Turn-Off Delay Time: 115 ns

Id - Continuous Drain Current: 260 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.2 mOhms

Vds - Drain-Source Breakdown Voltage: 170 V

Vgs th - Gate-Source Threshold Voltage: 5 V