IXYS IXFN150N65X2 HiperFET 650V/145A Ultra Junction X2-Class

Fall Time: 13 ns

Rise Time: 30 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 100 V

Pd - Power Dissipation: 1.04 mW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 55 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 145 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5 V