IXYS IXFN132N50P3 HiperFET 500V 112A 0.039Ohm PolarP3 Power MOSFET

Fall Time: 8 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 30 g

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.5 kW

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 112 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 39 mOhms

Vds - Drain-Source Breakdown Voltage: 500 V

Vgs th - Gate-Source Threshold Voltage: 5 V