IXYS IXFB210N30P3 Polar3 HiPerFET Power MOSFET N-Channel: Power MOSFET w/Fast Diode

Width: 5.31 mm

Height: 26.59 mm

Length: 20.29 mm

Fall Time: 13 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 268 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.89 kW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 46 ns

Typical Turn-Off Delay Time: 94 ns

Id - Continuous Drain Current: 210 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 60 S

Rds On - Drain-Source Resistance: 14.5 mOhms

Vds - Drain-Source Breakdown Voltage: 300 V

Vgs th - Gate-Source Threshold Voltage: 5 V