IXYS IXBT2N250 IGBT Transistors TO268 2500V 2A IGBT
ManufacturerIXYS(View more products from this manufacturer)
ModelIXBT2N250
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Technology: Si
Unit Weight: 6 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 32 W
Gate-Emitter Leakage Current: +/- 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 2.5 kV
Continuous Collector Current Ic Max: 5 A
Collector-Emitter Saturation Voltage: 3.8 V
Continuous Collector Current at 25 C: 5 A
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