IXYS IXBH42N250 IGBT Transistors TO247 2500V 42A HI GAIN
ManufacturerIXYS(View more products from this manufacturer)
ModelIXBH42N250
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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 500 W
Maximum Gate Emitter Voltage: - 25 V, 25 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 2.5 kV
Collector-Emitter Saturation Voltage: 3 V
Continuous Collector Current at 25 C: 104 A
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