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InterFET U309 JFET JFET N-Channel -25V Low Noise

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Technology: Si

Unit Weight: 5.844 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW (1/2 W)

Gate-Source Cutoff Voltage: - 4 V

Drain-Source Current at Vgs=0: 30 mA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 10 mS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 10 V

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