InterFET J309 JFET JFET N-Channel -25V Low Noise
ManufacturerInterFET(View more products from this manufacturer)
ModelJ309
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 360 mW
Gate-Source Cutoff Voltage: - 4 V
Drain-Source Current at Vgs=0: 30 mA
Id - Continuous Drain Current: 1 nA
Forward Transconductance - Min: 10000 uS
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 10 V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts