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InterFET J212 JFET JFET N-Channel

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Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Gate-Source Cutoff Voltage: - 6 V

Drain-Source Current at Vgs=0: 40 mA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 7000 uS

Vgs - Gate-Source Breakdown Voltage: - 25 V

Vds - Drain-Source Breakdown Voltage: 15 V

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