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InterFET IF1322AS08TR JFET JFET N-Channel (Dual) -20V Low Noise

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Technology: Si

Unit Weight: 540 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 480 mW

Gate-Source Cutoff Voltage: - 1.5 V

Drain-Source Current at Vgs=0: 25 mA

Id - Continuous Drain Current: 1 uA

Forward Transconductance - Min: 0.01 mS

Vgs - Gate-Source Breakdown Voltage: - 20 V

Vds - Drain-Source Breakdown Voltage: 10 V

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