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InterFET 2N4117A JFET JFET N-Channel -40V Low Ciss

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Technology: Si

Unit Weight: 667.857 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Gate-Source Cutoff Voltage: - 1.8 V

Drain-Source Current at Vgs=0: 90 uA

Id - Continuous Drain Current: 1 nA

Forward Transconductance - Min: 70 uS

Vgs - Gate-Source Breakdown Voltage: - 40 V

Vds - Drain-Source Breakdown Voltage: 10 V

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