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Infineon SPI08N50C3XKSA1 MOSFET

ModelSPI08N50C3XKSA1
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Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 32nC

Power consumption: 83W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 560V

Continuous drain current: 7.6A

Input Capacitance (Ciss): 750pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 600mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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