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Infineon SPA02N80C3XKSA1 MOSFET

ModelSPA02N80C3XKSA1
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Vgs(th): 3.9 V

Vgs (Max): 20V

Gate Charge (Qg): 16nC

Power consumption: 30.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 800V

Continuous drain current: 2A

Input Capacitance (Ciss): 290pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.7Ohm

Drive Voltage (Max Rds On, Min Rds On): 10V

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