Infineon IST006N04NM6AUMA1 MOSFETs TRENCH <= 40V

Fall Time: 15 ns

Rise Time: 22 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel Power MOSFET

Qg - Gate Charge: 127 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 25 ns

Typical Turn-Off Delay Time: 53 ns

Id - Continuous Drain Current: 475 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 330 S

Rds On - Drain-Source Resistance: 600 uOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.1 V