Infineon IRF8915 Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC

Type: Power MOSFET

FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 2W

Operating temperature: -55 to 150C

Drain to Source voltage: 20V

Continuous drain current: 8.9A

Current - Drain (Id) (25°C): 8.9A

Field-effect transistor type: 2N-Channel(Dual)

Gate Charge - (when applying Vgs): 7.4nC@4.5V

Drain to Source on-state resistance: 18.3mOhm

On Voltage - (Vgs when Id is applied): 2.5V@250uA

On Resistance - (Rds when Id,Vgs is applied): 18.3mOhm@8.9A|10V

Input Capacitance - (Ciss when Vds is applied): 540pF@10V

Datasheet