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Infineon IRF840PBF MOSFET

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Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 63nC

Power consumption: 125W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 500V

Continuous drain current: 8A

Input Capacitance (Ciss): 1300pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 850mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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