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Infineon IRF7855PBF Trans MOSFET N-CH 60V 12A 8-Pin SOIC Tube

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Type: Power MOSFET

Vgs(th): 4.9 V

Vgs (Max): 20V

Gate Charge (Qg): 39nC

Power consumption: 2.5W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 60V

Continuous drain current: 12A

Input Capacitance (Ciss): 1560pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 9.4mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Datasheet


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