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Infineon IRF6714MTRPBF MOSFET

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Vgs(th): 2.4 V

Vgs (Max): 20V

Gate Charge (Qg): 44nC

Power consumption: 2.8|89W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 25V

Continuous drain current: 29A/166A

Input Capacitance (Ciss): 3890pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2.1mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet


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