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Infineon IRF6609TRPBF Trans MOSFET N-CH Si 20V 31A 7-Pin Direct-FET MT T/R

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Vgs(th): 2.45 V

Vgs (Max): 20V

Gate Charge (Qg): 69nC

Power consumption: 1.8|89W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 31A/150A

Input Capacitance (Ciss): 6290pF

Operating temperature range: -40 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 2mOhm

Drive Voltage (Max Rds On, Min Rds On): 4.5|10V

Datasheet


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