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Infineon IRF5850 MOSFET

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FET Feature: Logic Level Gate

Mounting Type: Surface Mount

Power-Maximum: 960mW

Drain to Source voltage: 20V

Continuous drain current: 2.2A

Current - Drain (Id) (25°C): 2.2A

Field-effect transistor type: 2P-Channel(Dual)

Gate Charge - (when applying Vgs): 5.4nC@4.5V

On Voltage - (Vgs when Id is applied): 1.2V@250uA

On Resistance - (Rds when Id,Vgs is applied): 135mOhm@2.2A|4.5V

Input Capacitance - (Ciss when Vds is applied): 320pF@15V

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