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Infineon IRF5210STRRPBF Power MOSFET

ModelIRF5210STRRPBF
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Type: Power MOSFET

Vgs(th): 4 V

Vgs (Max): 20V

Gate Charge (Qg): 230nC

Power consumption: 3.1|170W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 100V

Continuous drain current: 38A

Input Capacitance (Ciss): 2780pF

Operating temperature range: -55 to 150C

Field-effect transistor type: P-CH

Drain to Source on-state resistance: 60mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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