For full functionality of this site it is necessary to enable JavaScript.
EMIN.MY
0
Product image

Infineon IPW60R280E6FKSA1 MOSFET

ModelIPW60R280E6FKSA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available

Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 43nC

Power consumption: 104W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 600V

Continuous drain current: 13.8A

Input Capacitance (Ciss): 950pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 280mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

Stay Updated with Offers

Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.

By subscribing, you agree to our Terms of Service and Privacy Policy.

Quick Support

Direct access to our certified experts