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Infineon IPP60R250CPXKSA1 MOSFET

ModelIPP60R250CPXKSA1
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Vgs(th): 3.5 V

Vgs (Max): 20V

Gate Charge (Qg): 35nC

Power consumption: 104W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 650V

Continuous drain current: 12A

Input Capacitance (Ciss): 1200pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 250mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V

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