Infineon IPG20N06S2L65AATMA1 MOSFETs MOSFET

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Technology: Si

Unit Weight: 98.560 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 43 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V