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Infineon IPD80P03P4L07ATMA2 OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 30V 80A 3-Pin TO-252 Surface M

ModelIPD80P03P4L07ATMA2
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Channel Type: P Channel

Qualification: AEC-Q101

Power Dissipation: 88

Transistor Mounting: Surface Mount

Transistor Case Style: TO-252

Drain Source Voltage Vds: 30

Operating Temperature Max: 175 °C

Continuous Drain Current Id: 80

Drain Source On State Resistance: 6.8

Gate Source Threshold Voltage Max: 2

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