Infineon IPD60R360P7SE8228AUMA1 MOSFETs CONSUMER

Fall Time: 10 ns

Rise Time: 7 ns

Technology: Si

Unit Weight: 4 g

Mounting Style: SMD/SMT

Qg - Gate Charge: 13 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 41 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 8 ns

Typical Turn-Off Delay Time: 42 ns

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 702 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V