Infineon IPD088N06N3GBTMA1 MOSFET
ManufacturerInfineon(View more products from this manufacturer)
ModelIPD088N06N3GBTMA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Vgs(th): 4 V
Vgs (Max): 20V
Gate Charge (Qg): 48nC
Power consumption: 71W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 60V
Continuous drain current: 50A
Input Capacitance (Ciss): 3900pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 8.8mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts