Infineon IPB80P04P4L08ATMA2 OptiMOS-P2 Power-Transistor P-Channel Enhancement Mode 40V 80A 3-Pin TO-263 Surface M
ManufacturerInfineon(View more products from this manufacturer)
ModelIPB80P04P4L08ATMA2
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Channel Type: P Channel
Qualification: AEC-Q101
Power Dissipation: 75
Transistor Mounting: Surface Mount
Transistor Case Style: TO-263
Drain Source Voltage Vds: 40
Operating Temperature Max: 175 °C
Continuous Drain Current Id: 80
Drain Source On State Resistance: 7.9
Gate Source Threshold Voltage Max: 2.2
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