Infineon IPB60R299CPAATMA1 Trans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
ManufacturerInfineon(View more products from this manufacturer)
ModelIPB60R299CPAATMA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Type: Power MOSFET
Vgs(th): 3.5 V
Vgs (Max): 20V
Gate Charge (Qg): 29nC
Power consumption: 96W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 600V
Continuous drain current: 11A
Input Capacitance (Ciss): 1100pF
Operating temperature range: -40 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 299mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts