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Infineon IPB60R190P6ATMA1 Trans MOSFET N-CH 650V 20.2A 3-Pin TO-263 T/R

ModelIPB60R190P6ATMA1
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No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 151

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263

Drain Source Voltage Vds: 650

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 20.2

Drain Source On State Resistance: 190

Gate Source Threshold Voltage Max: 4.5

Datasheet


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