Infineon IPAW60R600CEXKSA1 MOSFET
ManufacturerInfineon(View more products from this manufacturer)
ModelIPAW60R600CEXKSA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Vgs(th): 3.5 V
Vgs (Max): 20V
Gate Charge (Qg): 20.5nC
Power consumption: 28W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 600V
Continuous drain current: 10.3A
Input Capacitance (Ciss): 444pF
Operating temperature range: -40 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 600mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts