Infineon IMW120R090M1HXKSA1 SiC MOSFETS CoolSiC 1200V SiC Trench MOSFET in TO247-3 package

Fall Time: 12.6 ns

Rise Time: 4 ns

Technology: SiC

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Qg - Gate Charge: 21 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 115 W

Vgs - Gate-Source Voltage: - 7 V, + 23 V

Typical Turn-On Delay Time: 5.2 ns

Typical Turn-Off Delay Time: 11.5 ns

Id - Continuous Drain Current: 26 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 5 S

Rds On - Drain-Source Resistance: 117 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.7 V