Infineon IMLT65R026M2HXTMA1 SiC MOSFET Leverages switching performance while enabling the benefits of top-side cooling

Fall Time: 5.1 ns

Rise Time: 10.1 ns

Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 42 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 365 W

Vgs - Gate-Source Voltage: - 10 V, + 25 V

Typical Turn-On Delay Time: 9.3 ns

Typical Turn-Off Delay Time: 16 ns

Id - Continuous Drain Current: 82 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 33 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5.6 V