Infineon IKD03N60RFATMA1 IGBT Transistors IGBT w/ INTG DIODE 600V 5A
ManufacturerInfineon(View more products from this manufacturer)
ModelIKD03N60RFATMA1
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Width: 6.22 mm
Height: 2.41 mm
Length: 6.73 mm
Technology: Si
Unit Weight: 332.520 mg
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 53.6 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.2 V
Continuous Collector Current at 25 C: 6.5 A
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