Infineon IGOT65R025D2AUMA1 GaN Transistor HV GAN DISCRETES
ManufacturerInfineon(View more products from this manufacturer)
ModelIGOT65R025D2AUMA1
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Technology: GaN
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 16 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 181 W
Vgs - Gate-Source Voltage: - 10 V
Id - Continuous Drain Current: 61 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 30 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 1.6 V
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