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Infineon IGLD60R190D1AUMA1 Power Transistor MOSFET N-Channel Enhancement 600V 10A 8-Pin LSON

ModelIGLD60R190D1AUMA1
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Transistor Mounting: Surface Mount

Typical Gate Charge: 3.2

Transistor Case Style: LSON

Drain Source Voltage Vds: 600

Continuous Drain Current Id: 10

Drain Source On State Resistance: 190

Datasheet


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