Infineon IFS75B12N3E4_B31 IGBT Silicon Modules MIPAQ BASE 1200V 75A
ManufacturerInfineon(View more products from this manufacturer)
ModelIFS75B12N3E4_B31
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Technology: Si
Configuration: 6-Pack
Pd - Power Dissipation: 385 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Continuous Collector Current at 25 C: 75 A
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts